CSD18503Q5A

Teknik Özellikler

Turn On Delay Time

4.5 ns

Uzunluk

4.9mm

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Continuous Drain Current Id

19A

Ambalaj

Cut Tape (CT)

Case Connection

DRAIN

Fabrika Tedarik Süresi

16 Weeks

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

32nC @ 10V

Rise Time

8.8ns

Kılıf / Paket

8-PowerTDFN

Turn Off Delay Time

15 ns

Drainsource On Resistancemax

0.0062Ohm

Radyasyon Dayanımı

No

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

2640pF @ 20V

Current Continuous Drain Id25

19A Ta 100A Tc

Rds On Max Id Vgs

4.3m Ω @ 22A, 10V

Thickness

1mm

Seri

NexFET™

Parça Durumu

Active

Drain To Source Breakdown Voltage

40V

Reach Svhc

No SVHC

Number Of Elements

1

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Contact Plating

Tin

Vgsth Max Id

2.3V @ 250μA

Pin Sayısı

8

Threshold Voltage

1.8V

Element Configuration

Single

Terminal Sayısı

5

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

6mm