CSD17579Q3AT

Teknik Özellikler

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Continuous Drain Current Id

20A

Ds Breakdown Voltagemin

30V

Uzunluk

3.3mm

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Turn On Delay Time

2 ns

Turn Off Delay Time

11 ns

Drainsource On Resistancemax

0.0142Ohm

Gate Charge Qg Max Vgs

15nC @ 10V

Rise Time

5ns

Kılıf / Paket

8-PowerVDFN

Fabrika Tedarik Süresi

6 Weeks

Transistor Element Material

SILICON

Thickness

800μm

Seri

NexFET™

Input Capacitance Ciss Max Vds

998pF @ 15V

Current Continuous Drain Id25

20A Ta

Rds On Max Id Vgs

10.2m Ω @ 8A, 10V

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Avalanche Energy Rating Eas

14 mJ

Contact Plating

Tin

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Number Of Elements

1

Terminal Pozisyonu

DUAL

Pulsed Drain Currentmax Idm

106A

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Genişlik

3.3mm

Element Configuration

Single

Drain To Source Voltage Vdss

30V

Terminal Sayısı

5