CSD17570Q5BT

Teknik Özellikler

Uzunluk

5mm

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Ds Breakdown Voltagemin

30V

Turn On Delay Time

5 ns

REACH Uyumluluk Kodu

not_compliant

Case Connection

DRAIN

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

53A

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

121nC @ 4.5V

Terminal Kaplaması

Matte Tin (Sn)

Rise Time

36ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks

Drainsource On Resistancemax

0.00092Ohm

Turn Off Delay Time

144 ns

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Thickness

950μm

Seri

NexFET™

Current Continuous Drain Id25

100A Ta

Rds On Max Id Vgs

0.69m Ω @ 50A, 10V

Input Capacitance Ciss Max Vds

13600pF @ 15V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Contact Plating

Gold

Avalanche Energy Rating Eas

450 mJ

Terminal Sayısı

5

Element Configuration

Single

Drain To Source Voltage Vdss

30V

Pin Sayısı

8

Vgsth Max Id

1.9V @ 250μA

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

360A