CSD17551Q3A

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Nominal Vgs

1.6 V

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Reach Svhc

Unknown

Drain To Source Breakdown Voltage

30V

Contact Plating

Tin

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Thickness

800μm

Seri

NexFET™

Current Continuous Drain Id25

12A Tc

Rds On Max Id Vgs

9m Ω @ 11A, 10V

Input Capacitance Ciss Max Vds

1370pF @ 15V

Kılıf / Paket

8-PowerVDFN

Gate Charge Qg Max Vgs

7.8nC @ 4.5V

Rise Time

24ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

12 Weeks

Radyasyon Dayanımı

No

Turn Off Delay Time

12 ns

Uzunluk

3.3mm

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Turn On Delay Time

8 ns

Case Connection

DRAIN

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

12A

Number Of Channels

1

Temel Parça No

CSD17551

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Power Dissipation Max

2.6W Ta

Yükseklik

900μm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

3.4 ns

Çalışma Sıcaklığı

-55°C~150°C TJ