CSD16323Q3C

Teknik Özellikler

JESD-609 Kodu

e3

Power Dissipation

3W

Pulsed Drain Currentmax Idm

112A

Genişlik

3.3mm

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

5

Element Configuration

Single

Pin Sayısı

8

Vgsth Max Id

1.4V @ 250μA

Additional Feature

AVALANCHE RATED

Drain Currentmax Abs Id

60A

ECCN Kodu

EAR99

Terminal Formu

NO LEAD

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

3V 8V

Fall Time Typ

6.3 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Temel Parça No

CSD16323

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Power Dissipation Max

3W Ta

Case Connection

DRAIN

Pin Sayısı

8

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

21A

Uzunluk

3.3mm

Turn On Delay Time

5.3 ns

Drainsource On Resistancemax

0.0072Ohm

Turn Off Delay Time

13 ns

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

8.4nC @ 4.5V

Rise Time

15ns

Transistor Element Material

SILICON

Thickness

1mm

Seri

NexFET™

Current Continuous Drain Id25

21A Ta 60A Tc

Rds On Max Id Vgs

4.5m Ω @ 24A, 8V