STY139N65M5

Teknik Özellikler

Avalanche Energy Rating Eas

2400 mJ

Gate Charge Qg Max Vgs

363nC @ 10V

Montaj

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Fet Type

N-Channel

Seri

MDmesh™ V

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

10V

Number Of Channels

1

Current Continuous Drain Id25

130A Tc

RoHS Durumu

ROHS3 Compliant

Fall Time Typ

37 ns

Contact Plating

Tin

Çalışma Sıcaklığı

150°C TJ

Pin Sayısı

247

Turn Off Delay Time

295 ns

Genişlik

5.3mm

Pulsed Drain Currentmax Idm

520A

Direnç

17mOhm

Radyasyon Dayanımı

No

Yükseklik

24.6mm

Kurşunsuz

Lead Free

Vgs Max

±25V

Jesd30 Code

R-PSIP-T3

ECCN Kodu

EAR99

Element Configuration

Single

Drain To Source Breakdown Voltage

650V

Fabrika Tedarik Süresi

12 Weeks

Vgsth Max Id

5V @ 250μA

Transistor Application

SWITCHING

Max Junction Temperature Tj

150°C

Continuous Drain Current Id

130A

Kılıf / Paket

TO-247-3

Uzunluk

15.9mm

Terminal Sayısı

3

Turn On Delay Time

295 ns

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)