STY112N65M5

Teknik Özellikler

Drain To Source Voltage Vdss

650V

Fabrika Tedarik Süresi

12 Weeks

Drain To Source Breakdown Voltage

710V

Element Configuration

Single

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 250μA

Kılıf / Paket

TO-247-3

Continuous Drain Current Id

96A

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Pin Sayısı

3

Turn On Delay Time

267 ns

Additional Feature

AVALANCHE ENERGY RATED

Terminal Sayısı

3

Uzunluk

5.9mm

Ambalaj

Tube

Parça Durumu

Active

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Montaj Tipi

Through Hole

Gate To Source Voltage Vgs

25V

Terminal Kaplaması

Tin (Sn)

Reach Svhc

No SVHC

Temel Parça No

STY112

Power Dissipation Max

625W Tc

Rise Time

79ns

Input Capacitance Ciss Max Vds

16870pF @ 100V

Rds On Max Id Vgs

22m Ω @ 47A, 10V

Power Dissipation

625W

Threshold Voltage

4V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Through Hole

Gate Charge Qg Max Vgs

350nC @ 10V

Number Of Elements

1

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Seri

MDmesh™ V

Fall Time Typ

140 ns

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

96A Tc

Drive Voltage Max Rds On Min Rds On

10V