STW9N150

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

1.5kV

Terminal Kaplaması

Tin (Sn)

Montaj Tipi

Through Hole

Transistor Application

SWITCHING

Turn On Delay Time

41 ns

Pin Sayısı

3

Fall Time Typ

52 ns

Avalanche Energy Rating Eas

720 mJ

Vgs Max

±30V

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Temel Parça No

STW9N

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

14.7ns

Kurşunsuz

Lead Free

Uzunluk

15.75mm

Transistor Element Material

SILICON

Number Of Elements

1

Vgsth Max Id

5V @ 250μA

Fabrika Tedarik Süresi

12 Weeks

Drain Currentmax Abs Id

8A

Drain To Source Voltage Vdss

1500V

ECCN Kodu

EAR99

Max Junction Temperature Tj

150°C

Ambalaj

Tube

Pin Sayısı

3

Turn Off Delay Time

86 ns

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-247-3

Seri

PowerMESH™

Power Dissipation Max

320W Tc

Gate Charge Qg Max Vgs

89.3nC @ 10V

Threshold Voltage

4V

Reach Svhc

No SVHC

Current Continuous Drain Id25

8A Tc

Power Dissipation

320W

Continuous Drain Current Id

8A

Montaj

Through Hole