STW8NK80Z

Teknik Özellikler

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

1320pF @ 25V

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Yükseklik

20.15mm

Pulsed Drain Currentmax Idm

24.8A

Element Configuration

Single

Genişlik

5.15mm

Fet Type

N-Channel

Rds On Max Id Vgs

1.5 Ω @ 3.1A, 10V

Gate To Source Voltage Vgs

30V

Montaj

Through Hole

Continuous Drain Current Id

6.2A

Power Dissipation

140W

Current Continuous Drain Id25

6.2A Tc

Reach Svhc

No SVHC

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

46nC @ 10V

Power Dissipation Max

140W Tc

Threshold Voltage

3.75V

Radyasyon Dayanımı

No

Turn Off Delay Time

48 ns

Pin Sayısı

3

Seri

SuperMESH™

Kılıf / Paket

TO-247-3

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tube

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Vgsth Max Id

4.5V @ 100μA

Voltage Rated Dc

800V

Kurşunsuz

Lead Free

Rise Time

30ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Transistor Element Material

SILICON

Uzunluk

15.75mm

Temel Parça No

STW8N

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Vgs Max

±30V