STW78N65M5

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

450W

Rise Time

14ns

Çalışma Sıcaklığı

150°C TJ

Continuous Drain Current Id

69A

Fet Type

N-Channel

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Terminal Sayısı

3

Vgs Max

±25V

Current Continuous Drain Id25

69A Tc

Radyasyon Dayanımı

No

Pin Sayısı

3

Transistor Application

SWITCHING

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Turn On Delay Time

163 ns

JESD-609 Kodu

e3

Vgsth Max Id

5V @ 250μA

Genişlik

5.15mm

Pulsed Drain Currentmax Idm

276A

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Temel Parça No

STW78N

Yükseklik

20.15mm

Element Configuration

Single

Input Capacitance Ciss Max Vds

9000pF @ 100V

Seri

Automotive, AEC-Q101, MDmesh™ V

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

32m Ω @ 34.5A, 10V

Fabrika Tedarik Süresi

17 Weeks

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Drain To Source Breakdown Voltage

650V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

15.75mm

Contact Plating

Tin

Fall Time Typ

14 ns

Power Dissipation Max

450W Tc

Operating Mode

ENHANCEMENT MODE