STW70N60M2

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

17ns

Power Dissipation

450W

Parça Durumu

Active

Fet Type

N-Channel

Continuous Drain Current Id

68A

Gate To Source Voltage Vgs

25V

Vgs Max

±25V

Terminal Sayısı

3

Current Continuous Drain Id25

68A Tc

Radyasyon Dayanımı

No

Ds Breakdown Voltagemin

600V

Pin Sayısı

3

Transistor Application

SWITCHING

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

32 ns

Montaj Tipi

Through Hole

Number Of Channels

1

Pulsed Drain Currentmax Idm

272A

Temel Parça No

STW70N

Kurşunsuz

Lead Free

Weight

38.000013g

Element Configuration

Single

Seri

MDmesh™ II Plus

Input Capacitance Ciss Max Vds

5200pF @ 100V

Threshold Voltage

3V

Reach Svhc

No SVHC

Rds On Max Id Vgs

40m Ω @ 34A, 10V

Kılıf / Paket

TO-247-3

Fabrika Tedarik Süresi

16 Weeks

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

9 ns

Contact Plating

Tin

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

450W Tc