STW62N65M5

Teknik Özellikler

Input Capacitance Ciss Max Vds

6420pF @ 100V

Seri

Automotive, AEC-Q101, MDmesh™ V

Yükseklik

20.15mm

Element Configuration

Single

Fabrika Tedarik Süresi

17 Weeks

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

49m Ω @ 23A, 10V

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Uzunluk

15.75mm

Fall Time Typ

14 ns

Drain To Source Breakdown Voltage

710V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Power Dissipation Max

330W Tc

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

650V

Montaj

Through Hole

Gate Charge Qg Max Vgs

142nC @ 10V

Turn Off Delay Time

8 ns

Drainsource On Resistancemax

0.049Ohm

Power Dissipation

330W

Çalışma Sıcaklığı

150°C TJ

Rise Time

11ns

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

25V

Continuous Drain Current Id

46A

Fet Type

N-Channel

Parça Durumu

Active

Current Continuous Drain Id25

46A Tc

Radyasyon Dayanımı

No

Terminal Sayısı

3

Vgs Max

±25V

Transistor Application

SWITCHING

Pin Sayısı

3

Turn On Delay Time

101 ns

Vgsth Max Id

5V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)