STW60NM50N

Teknik Özellikler

Kurşunsuz

Lead Free

Temel Parça No

STW60N

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

272A

Lifecycle Status

NRND (Last Updated: 8 months ago)

Vgsth Max Id

4V @ 250μA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Terminal Sayısı

3

Vgs Max

±25V

Current Continuous Drain Id25

68A Tc

Continuous Drain Current Id

68A

Parça Durumu

Active

Fet Type

N-Channel

Gate To Source Voltage Vgs

25V

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

446W

Çalışma Sıcaklığı

150°C TJ

Rise Time

36ns

Drainsource On Resistancemax

0.043Ohm

Gate Charge Qg Max Vgs

178nC @ 10V

Turn Off Delay Time

40 ns

Jesd30 Code

R-PSFM-T3

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

446W Tc

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Avalanche Energy Rating Eas

551 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

500V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

27.5 ns

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

43m Ω @ 34A, 10V

Element Configuration

Single

Seri

MDmesh™ II