STW60N65M5

Teknik Özellikler

Gate Charge Qg Max Vgs

139nC @ 10V

Turn Off Delay Time

13 ns

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

Terminal Kaplaması

Matte Tin (Sn)

Number Of Elements

1

Power Dissipation Max

255W Tc

Operating Mode

ENHANCEMENT MODE

Uzunluk

15.75mm

Fall Time Typ

16 ns

Drain To Source Breakdown Voltage

650V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

Kılıf / Paket

TO-247-3

Threshold Voltage

4V

Rds On Max Id Vgs

59m Ω @ 23A, 10V

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

6810pF @ 100V

Seri

MDmesh™ V

Yükseklik

20.15mm

Element Configuration

Single

Kurşunsuz

Lead Free

Temel Parça No

STW60N

Additional Feature

ULTRA-LOW RESISTANCE

Genişlik

5.15mm

Montaj Tipi

Through Hole

Turn On Delay Time

90 ns

Vgsth Max Id

5V @ 250μA

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Pin Sayısı

3

Direnç

59MOhm

Radyasyon Dayanımı

No

Current Continuous Drain Id25

46A Tc

Terminal Sayısı

3

Vgs Max

±25V

Gate To Source Voltage Vgs

25V