STW55NM60ND

Teknik Özellikler

Number Of Channels

1

Vgsth Max Id

5V @ 250μA

Kurşunsuz

Lead Free

Temel Parça No

STW55N

Max Junction Temperature Tj

150°C

Rise Time

68ns

Çalışma Sıcaklığı

150°C TJ

Power Dissipation

350W

Direnç

60MOhm

Pin Sayısı

3

Radyasyon Dayanımı

No

Vgs Max

±25V

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

350W Tc

Threshold Voltage

4V

Rds On Max Id Vgs

60m Ω @ 25.5A, 10V

Input Capacitance Ciss Max Vds

5800pF @ 50V

Element Configuration

Single

Yükseklik

24.45mm

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

204A

Montaj Tipi

Through Hole

Genişlik

5.15mm

JESD-609 Kodu

e3

Turn On Delay Time

33 ns

Gate To Source Voltage Vgs

25V

Parça Durumu

Obsolete

Fet Type

N-Channel

Continuous Drain Current Id

51A

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Transistor Application

SWITCHING

Current Continuous Drain Id25

51A Tc

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

Number Of Elements

1