STW40N60M2

Teknik Özellikler

Pin Sayısı

3

Case Connection

DRAIN

Transistor Application

SWITCHING

Terminal Sayısı

3

Vgs Max

±25V

Ds Breakdown Voltagemin

600V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

34A Tc

Continuous Drain Current Id

34A

Fet Type

N-Channel

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

13.5ns

Weight

38.000013g

Kurşunsuz

Lead Free

Temel Parça No

STW40N

Number Of Channels

1

Montaj Tipi

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Turn On Delay Time

20.5 ns

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

11 ns

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

88m Ω @ 17A, 10V

Fabrika Tedarik Süresi

16 Weeks

Element Configuration

Single

Input Capacitance Ciss Max Vds

2500pF @ 100V

Seri

MDmesh™ II Plus

Drainsource On Resistancemax

0.088Ohm

Gate Charge Qg Max Vgs

57nC @ 10V

Turn Off Delay Time

96 ns

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

600V