STW3N150

Teknik Özellikler

Power Dissipation Max

140W Tc

Operating Mode

ENHANCEMENT MODE

Contact Plating

Tin

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Threshold Voltage

4V

Rds On Max Id Vgs

9 Ω @ 1.3A, 10V

Yükseklik

20.15mm

Element Configuration

Single

Input Capacitance Ciss Max Vds

939pF @ 25V

Kurşunsuz

Lead Free

Temel Parça No

STW3N

Vgsth Max Id

5V @ 250μA

Pin Sayısı

3

Vgs Max

±30V

Radyasyon Dayanımı

No

Drain Currentmax Abs Id

2.5A

Power Dissipation

140W

Çalışma Sıcaklığı

150°C TJ

Rise Time

47ns

Drainsource On Resistancemax

9Ohm

Turn Off Delay Time

45 ns

Gate Charge Qg Max Vgs

29.3nC @ 10V

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

1500V

Avalanche Energy Rating Eas

450 mJ

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

1.5kV

Uzunluk

15.75mm

Fall Time Typ

61 ns

Kılıf / Paket

TO-247-3

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

12 Weeks

Seri

PowerMESH™

Genişlik

5.15mm

Montaj Tipi

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)