STW36N55M5

Teknik Özellikler

Yükseklik

20.15mm

Element Configuration

Single

Input Capacitance Ciss Max Vds

2950pF @ 100V

Seri

MDmesh™ V

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

80m Ω @ 16.5A, 10V

Fabrika Tedarik Süresi

17 Weeks

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

550V

Uzunluk

15.75mm

Power Dissipation Max

190W Tc

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

56 ns

Gate Charge Qg Max Vgs

62nC @ 10V

Drainsource On Resistancemax

0.08Ohm

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

190W

Çalışma Sıcaklığı

150°C TJ

Continuous Drain Current Id

33A

Parça Durumu

Active

Fet Type

N-Channel

Gate To Source Voltage Vgs

25V

Terminal Sayısı

3

Vgs Max

±25V

Current Continuous Drain Id25

33A Tc

Radyasyon Dayanımı

No

Pin Sayısı

3

Transistor Application

SWITCHING

Turn On Delay Time

56 ns

Vgsth Max Id

5V @ 250μA

Genişlik

5.15mm

Montaj Tipi

Through Hole

Temel Parça No

STW36N

Kurşunsuz

Lead Free