STW32NM50N

Teknik Özellikler

Kurşunsuz

Lead Free

Temel Parça No

STW32N

Pulsed Drain Currentmax Idm

88A

Montaj Tipi

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e3

Vgsth Max Id

4V @ 250μA

Transistor Application

SWITCHING

Terminal Sayısı

3

Vgs Max

±25V

Current Continuous Drain Id25

22A Tc

Continuous Drain Current Id

22A

Parça Durumu

Active

Fet Type

N-Channel

Gate To Source Voltage Vgs

25V

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

190W

Rise Time

9.5ns

Çalışma Sıcaklığı

150°C TJ

Gate Charge Qg Max Vgs

62.5nC @ 10V

Turn Off Delay Time

110 ns

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

190W Tc

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

340 mJ

Number Of Elements

1

Drain To Source Breakdown Voltage

500V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

23.6 ns

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

130m Ω @ 11A, 10V

Fabrika Tedarik Süresi

16 Weeks