STW30NM50N

Teknik Özellikler

Kurşunsuz

Lead Free

Temel Parça No

STW30N

Vgsth Max Id

4V @ 250μA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Direnç

115mOhm

Pin Sayısı

3

Vgs Max

±25V

Drain Currentmax Abs Id

27A

Rise Time

20ns

Çalışma Sıcaklığı

150°C TJ

Power Dissipation

190W

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

190W Tc

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Rds On Max Id Vgs

115m Ω @ 13.5A, 10V

Threshold Voltage

3V

Element Configuration

Single

Input Capacitance Ciss Max Vds

2740pF @ 50V

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

108A

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Case Connection

ISOLATED

Terminal Sayısı

3

Current Continuous Drain Id25

27A Tc

Parça Durumu

Obsolete

Fet Type

N-Channel

Continuous Drain Current Id

13.5A

Gate To Source Voltage Vgs

25V

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Turn Off Delay Time

115 ns

Gate Charge Qg Max Vgs

94nC @ 10V

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1