STW28N60M2

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

170W

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

7.2ns

Continuous Drain Current Id

24A

Fet Type

N-Channel

Parça Durumu

Active

Drain Currentmax Abs Id

22A

Gate To Source Voltage Vgs

25V

Terminal Sayısı

3

Vgs Max

±25V

Current Continuous Drain Id25

24A Tc

Pin Sayısı

3

Transistor Application

SWITCHING

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Turn On Delay Time

14.5 ns

Vgsth Max Id

4V @ 250μA

Genişlik

5.15mm

Pulsed Drain Currentmax Idm

88A

Number Of Channels

1

Montaj Tipi

Through Hole

Weight

38.000013g

Kurşunsuz

Lead Free

Temel Parça No

STW28N

Yükseklik

20.15mm

Element Configuration

Single

Input Capacitance Ciss Max Vds

1370pF @ 100V

Seri

MDmesh™ II Plus

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

150m Ω @ 12A, 10V

Fabrika Tedarik Süresi

16 Weeks

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

15.75mm

Contact Plating

Tin

Fall Time Typ

8 ns

Power Dissipation Max

170W Tc