STW25NM60N

Teknik Özellikler

REACH Uyumluluk Kodu

not_compliant

Seri

MDmesh™ II

Reach Svhc

No SVHC

Kılıf / Paket

TO-247-3

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

24 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Avalanche Energy Rating Eas

850 mJ

Voltage Rated Dc

600V

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

94 ns

Gate Charge Qg Max Vgs

84nC @ 10V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Parça Durumu

Obsolete

Continuous Drain Current Id

21A

Gate To Source Voltage Vgs

25V

Terminal Sayısı

3

Current Continuous Drain Id25

21A Tc

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

84A

Element Configuration

Single

Input Capacitance Ciss Max Vds

2400pF @ 50V

Threshold Voltage

3V

Rds On Max Id Vgs

160m Ω @ 10.5A, 10V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

160W Tc

Akım Değeri

20A

Çalışma Sıcaklığı

150°C TJ

Rise Time

18ns