STW23NM60ND

Teknik Özellikler

Gate Charge Qg Max Vgs

70nC @ 10V

Turn Off Delay Time

90 ns

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Avalanche Energy Rating Eas

700 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

600V

Fall Time Typ

40 ns

Uzunluk

15.75mm

Kurşunsuz Kodu

yes

Reach Svhc

No SVHC

Kılıf / Paket

TO-247-3

Seri

FDmesh™ II

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

78A

Genişlik

5.15mm

JESD-609 Kodu

e3

Turn On Delay Time

21 ns

Transistor Application

SWITCHING

Terminal Sayısı

3

Current Continuous Drain Id25

19.5A Tc

Fet Type

N-Channel

Parça Durumu

Obsolete

Continuous Drain Current Id

19.5A

Gate To Source Voltage Vgs

25V

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

150W Tc

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Threshold Voltage

4V

Rds On Max Id Vgs

180m Ω @ 10A, 10V

Element Configuration

Single

Yükseklik

20.15mm

Input Capacitance Ciss Max Vds

2050pF @ 50V

Kurşunsuz

Lead Free