STW22NM60N

Teknik Özellikler

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

600V

Number Of Elements

1

Drainsource On Resistancemax

0.22Ohm

Turn Off Delay Time

74 ns

Gate Charge Qg Max Vgs

44nC @ 10V

Kılıf / Paket

TO-247-3

Reach Svhc

No SVHC

Seri

MDmesh™ II

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

15.75mm

Fall Time Typ

38 ns

Genişlik

5.15mm

Pulsed Drain Currentmax Idm

64A

Montaj Tipi

Through Hole

Turn On Delay Time

11 ns

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Continuous Drain Current Id

16A

Fet Type

N-Channel

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Terminal Sayısı

3

Current Continuous Drain Id25

16A Tc

Power Dissipation Max

125W Tc

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Threshold Voltage

3V

Rds On Max Id Vgs

220m Ω @ 8A, 10V

Yükseklik

20.15mm

Input Capacitance Ciss Max Vds

1330pF @ 50V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Additional Feature

AVALANCHE RATED