STW21NM60ND

Teknik Özellikler

Gate Charge Qg Max Vgs

60nC @ 10V

Turn Off Delay Time

70 ns

Number Of Elements

1

Power Dissipation Max

140W Tc

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Uzunluk

15.75mm

Fall Time Typ

48 ns

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1800pF @ 50V

Seri

FDmesh™ II

Yükseklik

20.15mm

Element Configuration

Single

Fabrika Tedarik Süresi

42 Weeks

Kılıf / Paket

TO-247-3

Threshold Voltage

4V

Rds On Max Id Vgs

220m Ω @ 8.5A, 10V

Reach Svhc

No SVHC

Kurşunsuz

Lead Free

Temel Parça No

STW21N

Turn On Delay Time

18 ns

JESD-609 Kodu

e3

Vgsth Max Id

5V @ 250μA

Genişlik

5.15mm

Pulsed Drain Currentmax Idm

68A

Montaj Tipi

Through Hole

Radyasyon Dayanımı

No

Current Continuous Drain Id25

17A Tc

Terminal Sayısı

3

Vgs Max

±25V

Transistor Application

SWITCHING

Pin Sayısı

3

Direnç

220mOhm

Power Dissipation

140W