STW21NM50N

Teknik Özellikler

Fall Time Typ

30 ns

Drain To Source Breakdown Voltage

500V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Transistor Element Material

SILICON

Rds On Max Id Vgs

190m Ω @ 9A, 10V

Kılıf / Paket

TO-247-3

Input Capacitance Ciss Max Vds

1950pF @ 25V

Seri

MDmesh™ II

Element Configuration

Single

Gate Charge Qg Max Vgs

65nC @ 10V

Turn Off Delay Time

90 ns

Akım Değeri

18A

RoHS Durumu

ROHS3 Compliant

Voltage Rated Dc

500V

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Avalanche Energy Rating Eas

480 mJ

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

140W Tc

Transistor Application

SWITCHING

Pin Sayısı

3

Current Continuous Drain Id25

18A Tc

Radyasyon Dayanımı

No

Vgs Max

±25V

Terminal Sayısı

3

Gate To Source Voltage Vgs

25V

Fet Type

N-Channel

Parça Durumu

Obsolete

Continuous Drain Current Id

18A

Çalışma Sıcaklığı

150°C TJ

Rise Time

18ns

Power Dissipation

140W

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Kurşunsuz

Lead Free

Temel Parça No

STW21N

Pulsed Drain Currentmax Idm

72A

Montaj Tipi

Through Hole