STW20N65M5

Teknik Özellikler

Gate Charge Qg Max Vgs

45nC @ 10V

Turn Off Delay Time

43 ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

130W Tc

Avalanche Energy Rating Eas

270 mJ

Number Of Elements

1

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Drain To Source Breakdown Voltage

650V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

7.5 ns

Uzunluk

15.75mm

Element Configuration

Single

Yükseklik

20.15mm

Input Capacitance Ciss Max Vds

1345pF @ 100V

Seri

MDmesh™ V

Rds On Max Id Vgs

190m Ω @ 9A, 10V

Kılıf / Paket

TO-247-3

Fabrika Tedarik Süresi

17 Weeks

Kurşunsuz

Lead Free

Temel Parça No

STW20N

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Vgsth Max Id

5V @ 250μA

Turn On Delay Time

43 ns

Pulsed Drain Currentmax Idm

72A

Montaj Tipi

Through Hole

Genişlik

5.15mm

Vgs Max

±25V

Terminal Sayısı

3

Current Continuous Drain Id25

18A Tc

Direnç

168MOhm

Pin Sayısı

3

Case Connection

DRAIN

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Rise Time

7.5ns

Çalışma Sıcaklığı

-55°C~150°C TJ