STW18NM60ND

Teknik Özellikler

Gate Charge Qg Max Vgs

34nC @ 10V

Turn Off Delay Time

13 ns

Drainsource On Resistancemax

0.29Ohm

Avalanche Energy Rating Eas

187 mJ

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

110W Tc

Drain To Source Voltage Vdss

600V

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Fall Time Typ

18 ns

Uzunluk

15.75mm

Drain To Source Breakdown Voltage

650V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1030pF @ 50V

Seri

FDmesh™ II

Element Configuration

Single

Yükseklik

20.15mm

Rds On Max Id Vgs

290m Ω @ 6.5A, 10V

Kılıf / Paket

TO-247-3

Kurşunsuz

Lead Free

Temel Parça No

STW18N

Vgsth Max Id

5V @ 250μA

Turn On Delay Time

55 ns

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

52A

Genişlik

5.15mm

Radyasyon Dayanımı

No

Current Continuous Drain Id25

13A Tc

Vgs Max

±25V

Terminal Sayısı

3

Case Connection

DRAIN

Transistor Application

SWITCHING

Pin Sayısı

3

Rise Time

15.5ns

Çalışma Sıcaklığı

150°C TJ

Drive Voltage Max Rds On Min Rds On

10V