STW18N65M5

Teknik Özellikler

Rise Time

7ns

Çalışma Sıcaklığı

150°C TJ

Power Dissipation

110W

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

25V

Parça Durumu

Active

Fet Type

N-Channel

Continuous Drain Current Id

15A

Current Continuous Drain Id25

15A Tc

Radyasyon Dayanımı

No

Vgs Max

±25V

Terminal Sayısı

3

Transistor Application

SWITCHING

Case Connection

DRAIN

Vgsth Max Id

5V @ 250μA

Pulsed Drain Currentmax Idm

60A

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Temel Parça No

STW18N

Seri

MDmesh™ V

Input Capacitance Ciss Max Vds

1240pF @ 100V

Element Configuration

Single

Fabrika Tedarik Süresi

17 Weeks

Rds On Max Id Vgs

220m Ω @ 7.5A, 10V

Kılıf / Paket

TO-247-3

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Fall Time Typ

9 ns

Drain To Source Breakdown Voltage

650V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

210 mJ

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

110W Tc

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Gate Charge Qg Max Vgs

31nC @ 10V

Drainsource On Resistancemax

0.22Ohm