STW18N60M2

Teknik Özellikler

Case Connection

DRAIN

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

600V

Current Continuous Drain Id25

13A Tc

Terminal Sayısı

3

Vgs Max

±25V

Continuous Drain Current Id

13A

Fet Type

N-Channel

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Temel Parça No

STW18N

Kurşunsuz

Lead Free

Terminal Pozisyonu

SINGLE

Pulsed Drain Currentmax Idm

52A

Montaj Tipi

Through Hole

Vgsth Max Id

4V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

16 Weeks

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

280m Ω @ 6.5A, 10V

Input Capacitance Ciss Max Vds

791pF @ 100V

Seri

MDmesh™ II Plus

Drainsource On Resistancemax

0.28Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

21.5nC @ 10V

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

600V

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Avalanche Energy Rating Eas

135 mJ

Number Of Elements

1

Power Dissipation Max

110W Tc

Operating Mode

ENHANCEMENT MODE