STW17N62K3

Teknik Özellikler

Radyasyon Dayanımı

No

Vgs Max

±30V

Direnç

280mOhm

Pin Sayısı

3

Rise Time

26ns

Çalışma Sıcaklığı

150°C TJ

Power Dissipation

190W

Kurşunsuz

Lead Free

Temel Parça No

STW17N

Vgsth Max Id

4.5V @ 100μA

Additional Feature

AVALANCHE ENERGY RATED

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2500pF @ 50V

Element Configuration

Single

Yükseklik

20.15mm

Rds On Max Id Vgs

380m Ω @ 7.5A, 10V

Threshold Voltage

3.75V

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

190W Tc

Current Continuous Drain Id25

15.5A Tc

Terminal Sayısı

3

Transistor Application

SWITCHING

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

30V

Parça Durumu

Obsolete

Fet Type

N-Channel

Continuous Drain Current Id

15.5A

JESD-609 Kodu

e3

Turn On Delay Time

22 ns

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

60A

Genişlik

5.15mm

Kurşunsuz Kodu

yes

Fall Time Typ

63 ns

Uzunluk

15.75mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

620V