STW13NB60

Teknik Özellikler

Input Capacitance Ciss Max Vds

2600pF @ 25V

Seri

PowerMESH™

Element Configuration

Single

REACH Uyumluluk Kodu

not_compliant

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

540m Ω @ 6.5A, 10V

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

15 ns

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

700 mJ

Number Of Elements

1

Power Dissipation Max

190W Tc

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

Non-RoHS Compliant

Akım Değeri

13A

Montaj

Through Hole

Terminal Kaplaması

Matte Tin (Sn)

Jesd30 Code

R-PSFM-T3

Voltage Rated Dc

600V

Gate Charge Qg Max Vgs

82nC @ 10V

Drainsource On Resistancemax

0.54Ohm

Power Dissipation

190W

Rise Time

13ns

Çalışma Sıcaklığı

150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

13A

Fet Type

N-Channel

Parça Durumu

Obsolete

Current Continuous Drain Id25

13A Tc

Terminal Sayısı

3

Vgs Max

±30V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e3