STW13N80K5

Teknik Özellikler

Terminal Pozisyonu

SINGLE

Temel Parça No

STW13N

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

5V @ 100μA

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

48A

Terminal Sayısı

3

Vgs Max

±30V

Ds Breakdown Voltagemin

800V

Current Continuous Drain Id25

12A Tc

Transistor Application

SWITCHING

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Fet Type

N-Channel

Drain Currentmax Abs Id

12A

Gate Charge Qg Max Vgs

29nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.45Ohm

Power Dissipation Max

190W Tc

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Avalanche Energy Rating Eas

148 mJ

Jesd30 Code

R-PSFM-T3

Montaj

Through Hole

Drain To Source Voltage Vdss

800V

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Seri

SuperMESH5™

Input Capacitance Ciss Max Vds

870pF @ 100V

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

450m Ω @ 6A, 10V

Fabrika Tedarik Süresi

17 Weeks