STW12N120K5

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Power Dissipation

250W

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

12A

Fet Type

N-Channel

Parça Durumu

Active

Gate To Source Voltage Vgs

30V

Terminal Sayısı

3

Vgs Max

±30V

Current Continuous Drain Id25

12A Tc

Radyasyon Dayanımı

No

Case Connection

DRAIN

Transistor Application

SWITCHING

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Vgsth Max Id

5V @ 100μA

Pulsed Drain Currentmax Idm

48A

Montaj Tipi

Through Hole

Terminal Pozisyonu

SINGLE

Temel Parça No

STW12N

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

1370pF @ 100V

Seri

MDmesh™ K5

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

690m Ω @ 6A, 10V

Fabrika Tedarik Süresi

17 Weeks

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

250W Tc

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

1200V

Gate Charge Qg Max Vgs

44.2nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.69Ohm