STW11NM80

Teknik Özellikler

Turn Off Delay Time

46 ns

Gate Charge Qg Max Vgs

43.6nC @ 10V

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

Voltage Rated Dc

800V

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Avalanche Energy Rating Eas

400 mJ

Drain To Source Breakdown Voltage

800V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

15.75mm

Fall Time Typ

15 ns

Kılıf / Paket

TO-247-3

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

16 Weeks

Seri

MDmesh™

Genişlik

5.15mm

Pulsed Drain Currentmax Idm

44A

Montaj Tipi

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Turn On Delay Time

22 ns

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Terminal Sayısı

3

Current Continuous Drain Id25

11A Tc

Continuous Drain Current Id

5.5A

Parça Durumu

Active

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Akım Değeri

11A

Power Dissipation Max

150W Tc

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Threshold Voltage

4V

Rds On Max Id Vgs

400m Ω @ 5.5A, 10V

Yükseklik

20.15mm