STW11NK90Z

Teknik Özellikler

Power Dissipation

200W

Rise Time

19ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

3

Radyasyon Dayanımı

No

Vgs Max

±30V

Additional Feature

HIGH VOLTAGE

Vgsth Max Id

4.5V @ 100μA

Kurşunsuz

Lead Free

Temel Parça No

STW11N

Rds On Max Id Vgs

980m Ω @ 4.6A, 10V

Threshold Voltage

3.75V

Input Capacitance Ciss Max Vds

3000pF @ 25V

Yükseklik

20.15mm

Element Configuration

Single

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Power Dissipation Max

200W Tc

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

9.2A

Parça Durumu

Active

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Transistor Application

SWITCHING

Current Continuous Drain Id25

9.2A Tc

Terminal Sayısı

3

Genişlik

5.15mm

Montaj Tipi

Through Hole

Turn On Delay Time

30 ns

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

TO-247-3

Reach Svhc

No SVHC

Jedec95 Code

TO-247AC

Seri

SuperMESH™

Uzunluk

15.75mm

Fall Time Typ

50 ns