STU8NM50N

Teknik Özellikler

Vgs Max

±25V

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

20A

Kurşunsuz Kodu

yes

Rise Time

4.4ns

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Rds On Max Id Vgs

790m Ω @ 2.5A, 10V

Fall Time Typ

8.8 ns

Avalanche Energy Rating Eas

140 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

5A

Uzunluk

6.6mm

Gate Charge Qg Max Vgs

14nC @ 10V

Fet Type

N-Channel

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Çalışma Sıcaklığı

150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Through Hole

Input Capacitance Ciss Max Vds

364pF @ 50V

Number Of Elements

1

Ambalaj

Tube

Turn On Delay Time

7 ns

Threshold Voltage

3V

Drain Currentmax Abs Id

5A

Drainsource On Resistancemax

0.79Ohm

Ds Breakdown Voltagemin

500V

Seri

MDmesh™ II

Turn Off Delay Time

25 ns

Vgsth Max Id

4V @ 250μA

Terminal Pozisyonu

SINGLE

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

25V

Kurşunsuz

Lead Free

Tepe Reflow Sıcaklığı (°C)

260

Yükseklik

6.9mm