STU6N62K3

Teknik Özellikler

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

22A

Vgs Max

±30V

Continuous Drain Current Id

5.5A

Uzunluk

6.6mm

Rise Time

12.5ns

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Rds On Max Id Vgs

1.2 Ω @ 2.8A, 10V

Drain To Source Breakdown Voltage

620V

Fall Time Typ

19 ns

Montaj

Through Hole

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

875pF @ 50V

Number Of Elements

1

Ambalaj

Tube

Turn On Delay Time

22 ns

Gate Charge Qg Max Vgs

30nC @ 10V

Fet Type

N-Channel

Transistor Element Material

SILICON

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

150°C TJ

Threshold Voltage

3.75V

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Additional Feature

ULTRA LOW-ON RESISTANCE

Seri

SuperMESH3™

Turn Off Delay Time

49 ns

Vgsth Max Id

4.5V @ 50μA

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Element Configuration

Single

Tepe Reflow Sıcaklığı (°C)

260

Yükseklik

6.9mm

Temel Parça No

STU6N

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

Kurşunsuz

Lead Free

Pin Sayısı

3