STU5N62K3

Teknik Özellikler

Parça Durumu

Active

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

N-Channel

Gate Charge Qg Max Vgs

26nC @ 10V

Ambalaj

Tube

Number Of Elements

1

Turn On Delay Time

12 ns

Montaj

Through Hole

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

680pF @ 50V

Threshold Voltage

3.75V

Vgs Max

±30V

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

16.8A

Drain To Source Breakdown Voltage

620V

Avalanche Energy Rating Eas

120 mJ

Fall Time Typ

21 ns

Reach Svhc

No SVHC

Rise Time

8ns

Rds On Max Id Vgs

1.6 Ω @ 2.1A, 10V

Montaj Tipi

Through Hole

Uzunluk

6.6mm

Continuous Drain Current Id

4.2A

Terminal Kaplaması

Matte Tin (Sn) - annealed

Direnç

1.6Ohm

Power Dissipation

70W

Pin Sayısı

3

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Genişlik

2.4mm

Power Dissipation Max

70W Tc

Pin Sayısı

3

Current Continuous Drain Id25

4.2A Tc

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Turn Off Delay Time

40 ns

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)