STU5N52K3

Teknik Özellikler

Seri

SuperMESH3™

Vgs Max

±30V

Turn Off Delay Time

29 ns

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Vgsth Max Id

4.5V @ 50μA

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Reach Svhc

No SVHC

Rise Time

11ns

Gate To Source Voltage Vgs

30V

Rds On Max Id Vgs

1.5 Ω @ 2.2A, 10V

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

525V

Kurşunsuz

Lead Free

Contact Plating

Tin

Fall Time Typ

16 ns

Element Configuration

Single

Yükseklik

6.9mm

Uzunluk

6.6mm

Continuous Drain Current Id

4.4A

Temel Parça No

STU5N

Fet Type

N-Channel

Gate Charge Qg Max Vgs

17nC @ 10V

Power Dissipation

70W

Parça Durumu

Active

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Through Hole

Pin Sayısı

3

Input Capacitance Ciss Max Vds

545pF @ 100V

Fabrika Tedarik Süresi

12 Weeks

Ambalaj

Tube

Number Of Elements

1

Turn On Delay Time

9 ns

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Genişlik

2.4mm