STU3LN62K3

Teknik Özellikler

Transistor Element Material

SILICON

Parça Durumu

Active

Çalışma Sıcaklığı

150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

3Ohm

Gate Charge Qg Max Vgs

17nC @ 10V

Fet Type

N-Channel

Power Dissipation

45W

Number Of Elements

1

Ambalaj

Tube

Turn On Delay Time

9 ns

Montaj

Through Hole

Input Capacitance Ciss Max Vds

386pF @ 50V

Pin Sayısı

3

Threshold Voltage

3.75V

Genişlik

2.4mm

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

45W Tc

Current Continuous Drain Id25

2.5A Tc

Pin Sayısı

3

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Turn Off Delay Time

30 ns

Vgs Max

±30V

Vgsth Max Id

4.5V @ 50μA

Lifecycle Status

NRND (Last Updated: 7 months ago)

Additional Feature

ULTRA-LOW RESISTANCE

Seri

SuperMESH3™

Radyasyon Dayanımı

No

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

620V

Fall Time Typ

27 ns

Avalanche Energy Rating Eas

90 mJ

Rise Time

7ns

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE