STU2NK100Z

Teknik Özellikler

Drain To Source Breakdown Voltage

1kV

Fall Time Typ

32.5 ns

Rise Time

6.5ns

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Rds On Max Id Vgs

8.5 Ω @ 900mA, 10V

Continuous Drain Current Id

1.85A

Uzunluk

6.6mm

Vgs Max

±30V

Radyasyon Dayanımı

No

Pulsed Drain Currentmax Idm

7.4A

Drive Voltage Max Rds On Min Rds On

10V

Threshold Voltage

3.75V

Transistor Element Material

SILICON

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

16nC @ 10V

Fet Type

N-Channel

Number Of Elements

1

Ambalaj

Tube

Turn On Delay Time

7.2 ns

Montaj

Through Hole

Input Capacitance Ciss Max Vds

499pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

Temel Parça No

STU2N

Element Configuration

Single

Tepe Reflow Sıcaklığı (°C)

260

Yükseklik

6.9mm

Turn Off Delay Time

41.5 ns

Vgsth Max Id

4.5V @ 50μA

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Seri

SuperMESH™

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Genişlik

2.4mm

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3