STU2N80K5

Teknik Özellikler

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Vgsth Max Id

5V @ 100μA

Turn Off Delay Time

19 ns

Seri

SuperMESH5™

Pulsed Drain Currentmax Idm

8A

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Avalanche Energy Rating Eas

60.5 mJ

Rds On Max Id Vgs

4.5 Ω @ 1A, 10V

Gate To Source Voltage Vgs

30V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Temel Parça No

STU2N

Yükseklik

6.2mm

Uzunluk

6.6mm

Continuous Drain Current Id

2A

Element Configuration

Single

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

800V

Fet Type

N-Channel

Gate Charge Qg Max Vgs

9.5nC @ 10V

Turn On Delay Time

8 ns

Ambalaj

Tube

Number Of Elements

1

Pin Sayısı

3

Fabrika Tedarik Süresi

17 Weeks

Input Capacitance Ciss Max Vds

105pF @ 100V

Montaj

Through Hole

Drain Currentmax Abs Id

2A

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Genişlik

2.4mm

Power Dissipation Max

45W Tc

Ds Breakdown Voltagemin

800V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

2A Tc