STU2N62K3

Teknik Özellikler

Vgs Max

±30V

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

8.8A

Radyasyon Dayanımı

No

Montaj Tipi

Through Hole

Rds On Max Id Vgs

3.6 Ω @ 1.1A, 10V

Rise Time

4.4ns

Reach Svhc

No SVHC

Fall Time Typ

22 ns

Avalanche Energy Rating Eas

85 mJ

Drain To Source Breakdown Voltage

620V

Continuous Drain Current Id

2.2A

Uzunluk

6.6mm

Gate Charge Qg Max Vgs

15nC @ 10V

Fet Type

N-Channel

Çalışma Sıcaklığı

150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

340pF @ 50V

Montaj

Through Hole

Turn On Delay Time

8 ns

Number Of Elements

1

Ambalaj

Tube

Threshold Voltage

3.75V

Seri

SuperMESH3™

Additional Feature

ULTRA-LOW RESISTANCE

Vgsth Max Id

4.5V @ 50μA

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Turn Off Delay Time

21 ns

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

Kurşunsuz

Lead Free

Yükseklik

6.9mm

Element Configuration

Single

Temel Parça No

STU2N

Power Dissipation

45W

Direnç

3.6Ohm