STS4DNFS30

Teknik Özellikler

Power Dissipation Max

2W Tc

Number Of Elements

1

Pin Sayısı

8

Terminal Pozisyonu

DUAL

Fet Type

N-Channel

Temel Parça No

STS4D

Turn Off Delay Time

15 ns

Drain To Source Breakdown Voltage

30V

Montaj Tipi

Surface Mount

Terminal Kaplaması

NICKEL PALLADIUM GOLD

Input Capacitance Ciss Max Vds

330pF @ 25V

Power Dissipation

2W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current Id

4.5A

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

3 (168 Hours)

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Seri

STripFET™

Terminal Sayısı

8

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

5V 10V

Rise Time

17ns

Rds On Max Id Vgs

55m Ω @ 2A, 10V

Pin Sayısı

8

Gate Charge Qg Max Vgs

4.7nC @ 5V

Current Continuous Drain Id25

4.5A Tc

Tepe Reflow Süresi (maks. sn)

30

Pulsed Drain Currentmax Idm

13A

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Fet Feature

Schottky Diode (Isolated)

Montaj

Surface Mount

Qualification Status

Not Qualified

Vgsth Max Id

1V @ 250μA

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V