STS10N3LH5

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Number Of Elements

1

Terminal Pozisyonu

DUAL

Temel Parça No

STS10

Avalanche Energy Rating Eas

50 mJ

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Power Dissipation Max

2.5W Tc

Montaj

Surface Mount

Gate To Source Voltage Vgs

22V

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±22V

Seri

STripFET™ V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Input Capacitance Ciss Max Vds

475pF @ 25V

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

10A Tc

Rds On Max Id Vgs

21m Ω @ 5A, 10V

Fall Time Typ

2.8 ns

Gate Charge Qg Max Vgs

4.6nC @ 5V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Rise Time

22ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fabrika Tedarik Süresi

14 Weeks

Fet Type

N-Channel

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

13 ns

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

30V

Drain To Source Voltage Vdss

30V

Terminal Sayısı

8

Lifecycle Status

NRND (Last Updated: 7 months ago)

Pin Sayısı

8

Vgsth Max Id

1V @ 250μA

Turn On Delay Time

4 ns