STQ2HNK60ZR-AP

Teknik Özellikler

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

600V

Terminal Pozisyonu

BOTTOM

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±30V

Gate To Source Voltage Vgs

30V

Fall Time Typ

50 ns

Gate Charge Qg Max Vgs

15nC @ 10V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Rds On Max Id Vgs

4.8 Ω @ 1A, 10V

Pulsed Drain Currentmax Idm

2A

Drain To Source Voltage Vdss

600V

Drain Currentmax Abs Id

0.5A

Fabrika Tedarik Süresi

8 Weeks

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

280pF @ 25V

Current Continuous Drain Id25

500mA Tc

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

13 ns

Turn On Delay Time

10 ns

RoHS Durumu

ROHS3 Compliant

Temel Parça No

STQ2

Kurşunsuz

Lead Free

Rise Time

30ns

Continuous Drain Current Id

500mA

Avalanche Energy Rating Eas

120 mJ

JESD-609 Kodu

e3

Contact Plating

Tin

Montaj Tipi

Through Hole

Fet Type

N-Channel

Seri

SuperMESH™

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Ambalaj

Tape & Box (TB)

Terminal Sayısı

3