STQ1NK80ZR-AP

Teknik Özellikler

Terminal Sayısı

3

Direnç

16Ohm

Ambalaj

Tape & Box (TB)

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Surface Mount, Through Hole

Vgsth Max Id

4.5V @ 50μA

Power Dissipation Max

3W Tc

Avalanche Energy Rating Eas

50 mJ

Continuous Drain Current Id

300mA

Rise Time

30ns

Nominal Vgs

3.75 V

JESD-609 Kodu

e3

Seri

SuperMESH™

Fet Type

N-Channel

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Threshold Voltage

3.75V

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

800V

Rds On Max Id Vgs

16 Ω @ 500mA, 10V

Pulsed Drain Currentmax Idm

5A

Input Capacitance Ciss Max Vds

160pF @ 25V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

8 Weeks

Current Continuous Drain Id25

300mA Tc

Element Configuration

Single

Temel Parça No

STQ1

Kurşunsuz

Lead Free

Turn On Delay Time

8 ns

Power Dissipation

3W

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

22 ns

Terminal Pozisyonu

BOTTOM

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

30V