STQ1NK60ZR-AP

Teknik Özellikler

Yükseklik

6.35mm

Gate Charge Qg Max Vgs

6.9nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

600V

Parça Durumu

Active

Vgs Max

±30V

Weight

4.535924g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Temel Parça No

STQ1

Kurşunsuz

Lead Free

Rds On Max Id Vgs

15 Ω @ 400mA, 10V

Fabrika Tedarik Süresi

8 Weeks

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Fet Type

N-Channel

Seri

SuperMESH™

Continuous Drain Current Id

400mA

Avalanche Energy Rating Eas

60 mJ

JESD-609 Kodu

e3

Montaj

Through Hole

Power Dissipation Max

3W Tc

Terminal Sayısı

3

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Fall Time Typ

28 ns

Pin Sayısı

3

Pin Sayısı

3

Terminal Pozisyonu

BOTTOM

Gate To Source Voltage Vgs

30V

Current Continuous Drain Id25

300mA Tc

Turn Off Delay Time

13 ns

Power Dissipation

3W

Turn On Delay Time

5.5 ns

Uzunluk

31.75mm

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Drain To Source Voltage Vdss

600V

Input Capacitance Ciss Max Vds

94pF @ 25V