STP9NK60Z

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

SuperMESH™

Genişlik

4.6mm

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1110pF @ 25V

Pin Sayısı

3

Montaj Tipi

Through Hole

Turn Off Delay Time

43 ns

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

3

Temel Parça No

STP9N

Number Of Elements

1

Fall Time Typ

15 ns

Akım Değeri

7A

Drain To Source Breakdown Voltage

600V

Power Dissipation

125W

Rise Time

17ns

Continuous Drain Current Id

3.5A

Kılıf / Paket

TO-220-3

Gate To Source Voltage Vgs

30V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Rds On Max Id Vgs

950m Ω @ 3.5A, 10V

Vgs Max

±30V

Turn On Delay Time

19 ns

Power Dissipation Max

125W Tc

Element Configuration

Single

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

7A Tc

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.4mm

Reach Svhc

No SVHC

Vgsth Max Id

4.5V @ 100μA

Pulsed Drain Currentmax Idm

28A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Yükseklik

9.15mm

Montaj

Through Hole

Voltage Rated Dc

600V